Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation
نویسندگان
چکیده
In this letter, we show the ability, through introduction of a thin Si12x2yGexCy layer, to eliminate the enhancement of enhanced boron diffusion in silicon due to an oxidizing surface or ion implant damage. This reduction of diffusion is accomplished through a low-temperature-grown thin epitaxial Si12x2yGexCy layer which completely filters out excess interstitials introduced by oxidation or ion implant damage. We also quantify the oxidation-enhanced diffusion ~OED! and transient-enhanced diffusion ~TED! dependence on substitutional carbon level, and further report both the observation of carbon TED and OED, and its dependence on carbon levels. © 1998 American Institute of Physics. @S0003-6951~98!00651-2#
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